PE5V6BA Datasheet and Replacement
Type Designator: PE5V6BA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 397 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: PDFN3X3P
PE5V6BA substitution
PE5V6BA Datasheet (PDF)
pe5v6ba.pdf

PE5V6BA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D30V 4.8m 68A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. D D D DG.
Datasheet: PE5B5DX , PE5B7BA , PE5C6JZ , PE5E6BA , PE5F7EA , PE5G5EA , PE5M6EA , PE5Q8JZ , IRF520 , PE609CA , PE674DT , PE6A4BA , PE6A6BA , PE6D2DX , PE6R8DX , PE6W2EA , PE6W8DX .
History: AM5430N
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History: AM5430N



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