FQP6N40CF MOSFET. Datasheet pdf. Equivalent

   Type Designator: FQP6N40CF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO220

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FQP6N40CF Datasheet (PDF)

..1. Size:1088K fairchild semi
fqp6n40cf fqpf6n40cf.pdf pdf_icon

February 2006TMFRFETFQP6N40CF/FQPF6N40CF 400V N-Channel MOSFETFeatures Description 6A, 400V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16nC)stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typi

6.1. Size:851K fairchild semi
fqp6n40c fqpf6n40c.pdf pdf_icon

TMQFETFQP6N40C/FQPF6N40C400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especially tailored to

6.2. Size:1303K onsemi
fqp6n40c.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.1. Size:658K fairchild semi
fqp6n50c.pdf pdf_icon

QFETFQP6N50C 500V N-Channel MOSFETFeatures Description 5.5 A, 500 V, RDS(on) = 1.2 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 19 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 15 pF)minimize

9.2. Size:534K fairchild semi
fqp6n60.pdf pdf_icon

April 2000TMQFETQFETQFETQFETFQP6N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been esp

9.3. Size:860K fairchild semi
fqp6n90c fqpf6n90c.pdf pdf_icon

TMQFETFQP6N90C/FQPF6N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

9.4. Size:736K fairchild semi
fqp6n50.pdf pdf_icon

April 2000TMQFETQFETQFETQFET 500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 500V, RDS(on) = 1.3 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been e

9.5. Size:931K fairchild semi
fqp6n60c fqp6n60c fqpf6n60c fqpf6n60c.pdf pdf_icon

QFETFQP6N60C/FQPF6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to

9.6. Size:763K fairchild semi
fqp6n70.pdf pdf_icon

April 2000TMQFETQFETQFETQFET 700V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.2A, 700V, RDS(on) = 1.5 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology has bee

9.7. Size:717K fairchild semi
fqp6n25.pdf pdf_icon

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been es

9.8. Size:765K fairchild semi
fqp6n90.pdf pdf_icon

April 2000TMQFETQFETQFETQFET 900V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been es

9.9. Size:743K fairchild semi
fqp6n15.pdf pdf_icon

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 6.4A, 150V, RDS(on) = 0.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.5 nC)planar stripe, DMOS technology. Low Crss ( typical 9.6 pF)This advanced technology has been es

9.10. Size:672K fairchild semi
fqp6n80.pdf pdf_icon

September 2000TMQFETFQP6N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, RDS(on) = 1.95 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailo

9.11. Size:889K fairchild semi
fqp6n80c fqpf6n80c.pdf pdf_icon

TMQFETFQP6N80C/FQPF6N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 8 pF)This advanced technology has been especially tailored to

9.12. Size:1046K onsemi
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9.13. Size:1255K onsemi
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9.14. Size:890K onsemi
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9.15. Size:262K inchange semiconductor
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isc N-Channel MOSFET Transistor FQP6N80CFEATURESDrain Current : I = 22A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.AB

Datasheet: FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , FQPF5N50C , FQP65N06 , FQP6N40C , FQU2N90 , 2SK3918 , FQU2N50B , FQP6N80C , FQD4P25TMWS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 .

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FQP6N40CF MOSFET. Datasheet pdf. Equivalent

FQP6N40CF Datasheet (PDF)

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