PG2910BEA
MOSFET. Datasheet pdf. Equivalent
Type Designator: PG2910BEA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 19
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 17.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.6
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 74
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029
Ohm
Package:
PDFN3X3P
PG2910BEA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PG2910BEA
Datasheet (PDF)
..1. Size:403K niko-sem
pg2910bea.pdf 
PG2910BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 29m 17.5A DD D D DG. GATE D. DRAIN GS. SOURCE 100% UIS Tested S100% Rg Tested #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou
7.1. Size:319K niko-sem
pg2910bd.pdf
N-Channel Enhancement Mode PG2910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 29.8m 27A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =
7.2. Size:375K niko-sem
pg2910bk.pdf
N-Channel Enhancement Mode PG2910BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 29.8m 27A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V
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