PG2910BEA Datasheet and Replacement
Type Designator: PG2910BEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 74 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: PDFN3X3P
PG2910BEA substitution
PG2910BEA Datasheet (PDF)
pg2910bea.pdf
PG2910BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 29m 17.5A DD D D DG. GATE D. DRAIN GS. SOURCE 100% UIS Tested S100% Rg Tested #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou
pg2910bd.pdf
N-Channel Enhancement Mode PG2910BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 29.8m 27A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =
pg2910bk.pdf
N-Channel Enhancement Mode PG2910BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 29.8m 27A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V
Datasheet: PEE50BB , PF515BM , PF5B3BA , PF5G3EA , PF608BA , PG1010BD , PG1010BK , PG2910BD , IRFP260N , PG2910BK , PG3510HEA , PG8E10AF , PG8E10AK , PI504BZ , PI517BZ , PI5B3BA , PJ527BA .
History: DH100P28I | DH100P30AF
Keywords - PG2910BEA MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: DH100P28I | DH100P30AF
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