PK5M6EA Datasheet and Replacement
Type Designator: PK5M6EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 89 nS
Cossⓘ - Output Capacitance: 297 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN5X6P
PK5M6EA substitution
PK5M6EA Datasheet (PDF)
pk5m6ea.pdf

N-Channel Enhancement Mode PK5M6EANIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 5m 24V 59A ESD Protected Gate Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Lo
Datasheet: PK5A7BA , PK5B3BA , PK5B9BA , PK5C1BA , PK5E4BA , PK5G3EA , PK5H3EN , PK5L4BA , AO3400 , PK5V6BA , PK5V8EN , PK5X8BA , PK601CA , PK609CA , PK626HY , PK676BA , PK6A8BA .
History: AP2608GY | 4N70KL-TM3-T
Keywords - PK5M6EA MOSFET datasheet
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History: AP2608GY | 4N70KL-TM3-T



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