All MOSFET. PK5V6BA Datasheet

 

PK5V6BA Datasheet and Replacement


   Type Designator: PK5V6BA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: PDFN5X6P
      - MOSFET Cross-Reference Search

 

PK5V6BA Datasheet (PDF)

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PK5V6BA

N-Channel Enhancement Mode PK5V6BA NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 4.3m 82A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Volta

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History: FQU2N50BTU | DMN2300UFB4 | TK2P60D | IRFBG20 | DMP2104LP | DMN60H3D5SK3

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