PK626HY
MOSFET. Datasheet pdf. Equivalent
Type Designator: PK626HY
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 24
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 43
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 34
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 162
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
PDFN5X6P
PK626HY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PK626HY
Datasheet (PDF)
..1. Size:270K niko-sem
pk626hy.pdf
Dual N-Channel Enhancement Mode PK626HY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 : G1 Q2 30V 2.4m 99A 2,3,4 : D1 5,6,7 : S2 Q1 30V 7m 43A 8 : G2 9 : S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V
9.1. Size:470K unikc
pk626ba.pdf
PK626BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.9m @VGS = 10V30V 110APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C110IDContinuous Drain Current3TC = 100 C69IDM150Pulsed Drain Cur
9.2. Size:246K niko-sem
pk626ba.pdf
PK626BANIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-FreeDD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 1.9m 150A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30 VGate-Source Voltage
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