PK892DS Datasheet and Replacement
Type Designator: PK892DS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 53 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 248 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: PDFN5X6S
PK892DS substitution
PK892DS Datasheet (PDF)
pk892ds.pdf

Dual N-Channel Enhancement Mode PK892DS NIKO-SEM Field Effect Transistor PDFN 5x6S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 0.85m 85A 5m Q1 30V 53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Lo
Datasheet: PK609CA , PK626HY , PK676BA , PK6A8BA , PK6B0SA , PK6M6DX , PK844DS , PK884DS , AON7506 , PK8A6EA , PK8B0BA , PK8C2BA , PK8D8BA , PKC46DY , PKCD0BB , PKCE9BB , PKCH6BB .
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