PK892DS Datasheet. Specs and Replacement

Type Designator: PK892DS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 248 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: PDFN5X6S

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PK892DS datasheet

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PK892DS

Dual N-Channel Enhancement Mode PK892DS NIKO-SEM Field Effect Transistor PDFN 5x6S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 0.85m 85A 5m Q1 30V 53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Lo... See More ⇒

Detailed specifications: PK609CA, PK626HY, PK676BA, PK6A8BA, PK6B0SA, PK6M6DX, PK844DS, PK884DS, RFP50N06, PK8A6EA, PK8B0BA, PK8C2BA, PK8D8BA, PKC46DY, PKCD0BB, PKCE9BB, PKCH6BB

Keywords - PK892DS MOSFET specs

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