All MOSFET. PK892DS Datasheet

 

PK892DS Datasheet and Replacement


   Type Designator: PK892DS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 248 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: PDFN5X6S
 

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PK892DS Datasheet (PDF)

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PK892DS

Dual N-Channel Enhancement Mode PK892DS NIKO-SEM Field Effect Transistor PDFN 5x6S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 0.85m 85A 5m Q1 30V 53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Lo

Datasheet: PK609CA , PK626HY , PK676BA , PK6A8BA , PK6B0SA , PK6M6DX , PK844DS , PK884DS , IRLZ44N , PK8A6EA , PK8B0BA , PK8C2BA , PK8D8BA , PKC46DY , PKCD0BB , PKCE9BB , PKCH6BB .

History: IXTH48P20P | PKEA6EB | MTN40N03J3 | NP84N04KHE | PM5Q2EA | PKCD0BB | TPCP8206

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