PP2H06BK
MOSFET. Datasheet pdf. Equivalent
Type Designator: PP2H06BK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 107
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 131
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 1569
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044
Ohm
Package:
PDFN5X6P
PP2H06BK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PP2H06BK
Datasheet (PDF)
..1. Size:373K niko-sem
pp2h06bk.pdf 
N-Channel Enhancement Mode PP2H06BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID D D D D60V 2.8m 131A GG. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volta
8.1. Size:363K niko-sem
pp2h06ak.pdf
N-Channel Enhancement Mode PP2H06AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID D D D D60V 2.8m 140A GG. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volta
8.2. Size:244K niko-sem
pp2h06at.pdf
N-Channel Enhancement Mode PP2H06AT NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY DV(BR)DSS RDS(ON) ID 60V 3.2m 147A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25
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