All MOSFET. PP4B10AF Datasheet

 

PP4B10AF MOSFET. Datasheet pdf. Equivalent


   Type Designator: PP4B10AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 79 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 757 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: TO-220F

 PP4B10AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PP4B10AF Datasheet (PDF)

 ..1. Size:210K  niko-sem
pp4b10af.pdf

PP4B10AF
PP4B10AF

N-Channel Enhancement Mode PP4B10AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 4.4m 79A G1. GATE 2. DRAIN S 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 7.1. Size:366K  niko-sem
pp4b10ak.pdf

PP4B10AF
PP4B10AF

N-Channel Enhancement Mode PP4B10AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID DD D D D100V 4.2m 127A MSL (Moisture Sensitivity Level) 1. GG. GATE D. DRAIN S S. SOURCE #1 S S S GABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-So

 7.2. Size:235K  niko-sem
pp4b10as.pdf

PP4B10AF
PP4B10AF

N-Channel Enhancement Mode PP4B10AS NIKO-SEM Field Effect Transistor TO-263 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 4.4m 139A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

 7.3. Size:237K  niko-sem
pp4b10at.pdf

PP4B10AF
PP4B10AF

N-Channel Enhancement Mode PP4B10AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 4.5m 137A 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

 7.4. Size:203K  niko-sem
pp4b10ad.pdf

PP4B10AF
PP4B10AF

N-Channel Logic Level Enhancement PP4B10AD NIKO-SEM Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.5m 100V 123A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 123 Continuous

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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