PP4B10BS Specs and Replacement

Type Designator: PP4B10BS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 134 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 744 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: TO-263

PP4B10BS substitution

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PP4B10BS datasheet

 ..1. Size:190K  niko-sem
 pp4b10bs.pdf pdf_icon

PP4B10BS

N-Channel Logic Level Enhancement PP4B10BS NIKO-SEM Mode Field Effect Transistor TO-263 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.2m 100V 134A G 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 134 Continuous ... See More ⇒

 7.1. Size:189K  niko-sem
 pp4b10bd.pdf pdf_icon

PP4B10BS

N-Channel Logic Level Enhancement PP4B10BD NIKO-SEM Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.2m 100V 127A G 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 127 Continuous ... See More ⇒

 7.2. Size:255K  niko-sem
 pp4b10bk.pdf pdf_icon

PP4B10BS

N-Channel Enhancement Mode PP4B10BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 4.2m 127A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V... See More ⇒

 7.3. Size:189K  niko-sem
 pp4b10bf.pdf pdf_icon

PP4B10BS

N-Channel Enhancement Mode PP4B10BF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 4.4m 78A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25... See More ⇒

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Detailed specifications: PP4B10AD, PP4B10AF, PP4B10AK, PP4B10AS, PP4B10AT, PP4B10BD, PP4B10BF, PP4B10BK, 20N60, PP9C15AD, PP9C15AF, PP9C15AK, PP9C15AT, PP9H06BD, PP9H06BEA, PP9H06BI, PP9H06BK

Keywords - PP4B10BS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.