All MOSFET. PP9C15AT Datasheet

 

PP9C15AT Datasheet and Replacement


   Type Designator: PP9C15AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 89 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 326 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: TO-220
 

 PP9C15AT substitution

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PP9C15AT Datasheet (PDF)

 ..1. Size:316K  niko-sem
pp9c15at.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 89A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =

 7.1. Size:324K  niko-sem
pp9c15af.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 50A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =

 7.2. Size:369K  niko-sem
pp9c15ak.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 9.3m 83A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source

 7.3. Size:315K  niko-sem
pp9c15ad.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 70A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =

Datasheet: PP4B10AT , PP4B10BD , PP4B10BF , PP4B10BK , PP4B10BS , PP9C15AD , PP9C15AF , PP9C15AK , IRF640 , PP9H06BD , PP9H06BEA , PP9H06BI , PP9H06BK , PP9H06BV , PQ5G4JN , PQ5U2JN , PQ6S2JN .

History: HYG023N03LR1U | 18N20

Keywords - PP9C15AT MOSFET datasheet

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