PP9C15AT Specs and Replacement

Type Designator: PP9C15AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 89 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 326 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: TO-220

PP9C15AT substitution

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PP9C15AT datasheet

 ..1. Size:316K  niko-sem
 pp9c15at.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 89A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC = ... See More ⇒

 7.1. Size:324K  niko-sem
 pp9c15af.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 50A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =... See More ⇒

 7.2. Size:369K  niko-sem
 pp9c15ak.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 150V 9.3m 83A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source ... See More ⇒

 7.3. Size:315K  niko-sem
 pp9c15ad.pdf pdf_icon

PP9C15AT

N-Channel Enhancement Mode PP9C15AD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 70A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC = ... See More ⇒

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Detailed specifications: PP4B10AT, PP4B10BD, PP4B10BF, PP4B10BK, PP4B10BS, PP9C15AD, PP9C15AF, PP9C15AK, IRFP460, PP9H06BD, PP9H06BEA, PP9H06BI, PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN

Keywords - PP9C15AT MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.