PP9H06BD Specs and Replacement
Type Designator: PP9H06BD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 565 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
Package: TO-252
PP9H06BD substitution
- MOSFET ⓘ Cross-Reference Search
PP9H06BD datasheet
pp9h06bd.pdf
PP9H06BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 60V 9.8m 64A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 2... See More ⇒
pp9h06bk.pdf
N-Channel Enhancement Mode PP9H06BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 9.1m 60A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volt... See More ⇒
pp9h06bea.pdf
N-Channel Enhancement Mode PP9H06BEA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY D D D D V(BR)DSS RDS(ON) ID G. GATE G 60V 9.8m 47A D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Volt... See More ⇒
pp9h06bi.pdf
PP9H06BI N-Channel Enhancement Mode NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 60V 9.8m 64A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 2... See More ⇒
Detailed specifications: PP4B10BD, PP4B10BF, PP4B10BK, PP4B10BS, PP9C15AD, PP9C15AF, PP9C15AK, PP9C15AT, IRFZ44, PP9H06BEA, PP9H06BI, PP9H06BK, PP9H06BV, PQ5G4JN, PQ5U2JN, PQ6S2JN, PQ6V2JN
Keywords - PP9H06BD MOSFET specs
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