All MOSFET. PW5S6EA Datasheet

 

PW5S6EA Datasheet and Replacement


   Type Designator: PW5S6EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: SOT-723
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PW5S6EA Datasheet (PDF)

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PW5S6EA

N-Channel Logic Level Enhancement PW5S6EA NIKO-SEM Mode Field Effect Transistor SOT-723 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 480m 0.65A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Pro

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History: WSP4888 | IRFZ48RS | 2SK2094 | SMG2302N | WSD30L30DN | HMS21N70F | IPI47N10S-33

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