PW5S6EA Specs and Replacement
Type Designator: PW5S6EA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 14 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: SOT-723
PW5S6EA substitution
- MOSFET ⓘ Cross-Reference Search
PW5S6EA datasheet
pw5s6ea.pdf
N-Channel Logic Level Enhancement PW5S6EA NIKO-SEM Mode Field Effect Transistor SOT-723 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 480m 0.65A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Pro... See More ⇒
Detailed specifications: PV609CA, PV616DA, PV6A4BA, PV6A6BA, PV6A8BA, PV6D2DA, PW567EA, PW5D8EA, K3569, PX567EA, PX567JZ, PX5D8EA, PX5D8JZ-T, PX5S6EA, PX5S6JZ, PX607UZ, PZ5203EMAA
Keywords - PW5S6EA MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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