PX607UZ MOSFET. Datasheet pdf. Equivalent
Type Designator: PX607UZ
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 0.53 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-563
PX607UZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PX607UZ Datasheet (PDF)
..1. Size:482K niko-sem
px607uz.pdf
px607uz.pdf
PX607UZ N- & P-Channel Enhancement Mode NIKO-SEM SOT-563 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 300m 0.78A P-Channel -20V 520m -0.53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Mi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
