All MOSFET. PX607UZ Datasheet

 

PX607UZ Datasheet and Replacement


   Type Designator: PX607UZ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-563
 

 PX607UZ substitution

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PX607UZ Datasheet (PDF)

 ..1. Size:482K  niko-sem
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PX607UZ

PX607UZ N- & P-Channel Enhancement Mode NIKO-SEM SOT-563 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 300m 0.78A P-Channel -20V 520m -0.53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Mi

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History: CS4N65FA9HD

Keywords - PX607UZ MOSFET datasheet

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