All MOSFET. PX607UZ Datasheet

 

PX607UZ Datasheet and Replacement


   Type Designator: PX607UZ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-563
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PX607UZ Datasheet (PDF)

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PX607UZ

PX607UZ N- & P-Channel Enhancement Mode NIKO-SEM SOT-563 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID N-Channel 20V 300m 0.78A P-Channel -20V 520m -0.53A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Mi

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History: IRF7469PBF-1 | KND3206A | EFC4621R | GSM4936S | QS8M13 | IRF9Z24S | ATM2N65TE

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