All MOSFET. PZ5D8EA Datasheet

 

PZ5D8EA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PZ5D8EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.84 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.4 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT-323

 PZ5D8EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PZ5D8EA Datasheet (PDF)

 ..1. Size:403K  niko-sem
 pz5d8ea.pdf

PZ5D8EA PZ5D8EA

N-Channel Logic Level Enhancement PZ5D8EA NIKO-SEM Mode Field Effect Transistor SOT-323 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 300m 0.84A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. ESD

 9.1. Size:705K  niko-sem
 pz5d8jz.pdf

PZ5D8EA PZ5D8EA

Dual N-Channel Logic Level PZ5D8JZ NIKO-SEM Enhancement Mode Field Effect Transistor SOT-363 Halogen-Free & Lead-Free PRODUCT SUMMARY 1 2 V(BR)DSS RDS(ON) ID 20V 300m 0.78A 1 2 1 2 Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top