All MOSFET. SJMN600R65CF Datasheet

 

SJMN600R65CF Datasheet and Replacement


   Type Designator: SJMN600R65CF
   Marking Code: N600R65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12 nC
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 607 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-220F
 

 SJMN600R65CF substitution

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SJMN600R65CF Datasheet (PDF)

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 sjmn600r65cf.pdf pdf_icon

SJMN600R65CF

SJMN600R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN6

 3.1. Size:732K  auk
 sjmn600r65cd.pdf pdf_icon

SJMN600R65CF

SJMN600R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on)D Ultra low gate charge: Qg=12nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN6

 4.1. Size:586K  auk
 sjmn600r65b.pdf pdf_icon

SJMN600R65CF

SJMN600R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN600R65B S

 4.2. Size:779K  auk
 sjmn600r65f.pdf pdf_icon

SJMN600R65CF

SJMN600R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R65F N600R65 T

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Datasheet: SJMN380R70D , SJMN380R70F , SJMN380R80ZB , SJMN380R80ZFD , SJMN600R60D , SJMN600R60F , SJMN600R65B , SJMN600R65CD , IRF640 , SJMN600R65D , SJMN600R65F , SJMN600R70D , SJMN600R70I , SJMN600R70MD , SJMN600R70MF , SJMN600R70ZD , SJMN600R70ZF .

Keywords - SJMN600R65CF MOSFET datasheet

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