FQPF11N40C PDF and Equivalents Search

 

FQPF11N40C Specs and Replacement

Type Designator: FQPF11N40C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: TO220F

FQPF11N40C substitution

- MOSFET ⓘ Cross-Reference Search

 

FQPF11N40C datasheet

 ..1. Size:1216K  fairchild semi
 fqp11n40c fqpf11n40c.pdf pdf_icon

FQPF11N40C

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially... See More ⇒

 0.1. Size:1213K  fairchild semi
 fqpf11n40ct.pdf pdf_icon

FQPF11N40C

May 2008 QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description 10.5 A, 400V, RDS(on) = 0.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28 nC) DMOS technology. Low Crss ( typical 85pF) This advanced technology has been especially... See More ⇒

 5.1. Size:709K  fairchild semi
 fqpf11n40t.pdf pdf_icon

FQPF11N40C

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.6A, 400V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been... See More ⇒

 7.1. Size:1291K  fairchild semi
 fqp11n50cf fqp11n50cf fqpf11n50cf.pdf pdf_icon

FQPF11N40C

July 2005 TM FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features Description 11A, 500V, RDS(on) = 0.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tai... See More ⇒

SHOW MORE

Detailed specifications: FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF , IRLZ44N , FDU6N50 , FQPF11N50CF , FQPF11P06 , FQPF13N06L , FQPF13N50CF , FQPF15P12 , FQPF16N15 , FQPF16N25C .

Keywords - FQPF11N40C MOSFET specs

 FQPF11N40C cross reference
 FQPF11N40C equivalent finder
 FQPF11N40C pdf lookup
 FQPF11N40C substitution
 FQPF11N40C replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
↑ Back to Top
.