SMN0665FD
MOSFET. Datasheet pdf. Equivalent
Type Designator: SMN0665FD
Marking Code: SMN0665
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 79
nS
Cossⓘ -
Output Capacitance: 67
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2
Ohm
Package:
TO-220F
SMN0665FD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMN0665FD
Datasheet (PDF)
..1. Size:423K auk
smn0665fd.pdf
SMN0665FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=650V (Min.) Low gate charge: Qg=14nC (Typ.) Low drain-source On resistance: RDS(on)=1.8 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0665FD SMN0665 TO-220F-3L Mar
6.1. Size:591K auk
smn0665f.pdf
SMN0665F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =650V (Min.) DSS Low gate charge: Q =14nC (Typ.) g Low drain-source On resistance: R =2.2 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0665F SMN0665 TO-
9.1. Size:97K philips
psmn063-150d 2.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTION PINNING SOT428 (Dpak)SiliconMAX products use the latest PIN DESCRIPTIONtab
9.2. Size:223K philips
psmn069-100ys.pdf
PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren
9.3. Size:733K nxp
psmn063-150d.pdf
PSMN063-150DN-channel TrenchMOS SiliconMAX standard level FETRev. 04 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a
9.4. Size:823K nxp
psmn069-100ys.pdf
PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren
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