SNN060L10NL
MOSFET. Datasheet pdf. Equivalent
Type Designator: SNN060L10NL
Marking Code: N060L10
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 79
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 92
nC
trⓘ - Rise Time: 57
nS
Cossⓘ -
Output Capacitance: 584
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package: TESOP-8
SNN060L10NL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SNN060L10NL
Datasheet (PDF)
..1. Size:728K auk
snn060l10nl.pdf
SNN060L10NL N-Channel Trench MOSFET 100V N-channel Power MOSFETs Features Extremely low On-state resistance Excellent Q * R product (FOM) g DS(on) Advanced trench process technology Halogen free available and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNN060L10NL N060L10 TESOP-8 (DFN5x6) (DFN 5x6) Marking Informati
5.1. Size:864K auk
snn060l10f.pdf
SNN060L10F N-channel Trench MOSFET Features Extremely low On-state resistance Excellent QgxRDS(on) product (FoM) Advanced trench process technology Halogen-free & RoHS compliant device Applications Synchronous Rectification for AC/DC Quick Charger G D S Battery management UPS (Uninterruptible Power Supply) TO-220F-3L Ordering Information
9.1. Size:383K auk
snn0630q.pdf
SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features Low On-state resistance: 28m at VGS = 10V, ID = 2.9A Low gate charge: Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package S
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