SNN060L10NL Specs and Replacement

Type Designator: SNN060L10NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 584 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TESOP-8

SNN060L10NL substitution

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SNN060L10NL datasheet

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snn060l10nl.pdf pdf_icon

SNN060L10NL

SNN060L10NL N-Channel Trench MOSFET 100V N-channel Power MOSFETs Features Extremely low On-state resistance Excellent Q * R product (FOM) g DS(on) Advanced trench process technology Halogen free available and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNN060L10NL N060L10 TESOP-8 (DFN5x6) (DFN 5x6) Marking Informati... See More ⇒

 5.1. Size:864K  auk
snn060l10f.pdf pdf_icon

SNN060L10NL

SNN060L10F N-channel Trench MOSFET Features Extremely low On-state resistance Excellent QgxRDS(on) product (FoM) Advanced trench process technology Halogen-free & RoHS compliant device Applications Synchronous Rectification for AC/DC Quick Charger G D S Battery management UPS (Uninterruptible Power Supply) TO-220F-3L Ordering Information ... See More ⇒

 9.1. Size:383K  auk
snn0630q.pdf pdf_icon

SNN060L10NL

SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features Low On-state resistance 28m at VGS = 10V, ID = 2.9A Low gate charge Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package S... See More ⇒

Detailed specifications: SMK1065F, SMN03T80I, SMN0665FD, SMN630LD, SNA3100L10NL, SNA3100L10NN, SNN055N085D, SNN060L10F, K3569, SNN10R10LD, SNN10R10LF, SNN1120L10Q, SNN1530NL, SNN1830NL, SNN200L10D, SNN300L06D, SNN3100L10D

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