FQPF13N50CF MOSFET. Datasheet pdf. Equivalent
Type Designator: FQPF13N50CF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
Package: TO220F
FQPF13N50CF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQPF13N50CF Datasheet (PDF)
fqp13n50cf fqpf13n50cf.pdf
May 2006TMFRFETFQP13N50CF / FQPF13N50CF 500V N-Channel MOSFETFeatures Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC)DMOS technology. Low Crss (typical 20pF)This advanced technology has been especially t
fqpf13n50cf.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqpf13n50cf.pdf
isc N-Channel MOSFET Transistor FQPF13N50CFFEATURESDrain Current : I =13A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.54m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
fqp13n50c fqpf13n50c.pdf
TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t
fqp13n50c fqpf13n50c.pdf
November 2013FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, ID = 6.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC)technology has been especia
fqpf13n50csdtu fqpf13n50ct.pdf
TMQFETFQP13N50C/FQPF13N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC)planar stripe, DMOS technology. Low Crss ( typical 20pF)This advanced technology has been especially tailored t
fqp13n50c fqpf13n50c.pdf
FQP13N50C / FQPF13N50CN-Channel QFET MOSFET500 V, 13 A, 480 mDescriptionFeaturesThese N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V,transistors are produced using ON Semiconductors ID = 6.5 Aproprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC)advanced technology has been especially tail
fqpf13n50c.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FQPF13N50CFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: FQPF10N20C , FDP39N20 , FQPF10N50CF , FQPF11N40C , FDU6N50 , FQPF11N50CF , FQPF11P06 , FQPF13N06L , IRF640N , FQPF15P12 , FQPF16N15 , FQPF16N25C , FQPF17N40 , FDS8690 , FQPF19N10 , FDD20AN06F085 , FQPF19N20 .
History: HM13N50F
