AOCA32106E Specs and Replacement

Type Designator: AOCA32106E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: DFN1.84X1.96-10L

AOCA32106E substitution

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AOCA32106E datasheet

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AOCA32106E

AOCA32106E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA32106E

AOCA32107E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 6.2. Size:793K  aosemi
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AOCA32106E

AOCA32108E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 7.1. Size:590K  aosemi
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AOCA32106E

AOCA32112E 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

Detailed specifications: QM1830M3, AOCR33105E, AOCR35101E, AOCR36330, AOCR32326, AOCA32112E, AOCA32116E, AOCA24108E, IRFB31N20D, AOCA72114, AOCA32301, AOCA24106C, AOCA24106E, AOCA33103E, AOCA33104A, AOCA33104E, AOCA72104E

Keywords - AOCA32106E MOSFET specs

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