AOCA33104E Specs and Replacement

Type Designator: AOCA33104E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: DFN2.98X1.49-10L

AOCA33104E substitution

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AOCA33104E datasheet

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AOCA33104E

AOCA33104E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA33104E

AOCA33104A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOCA33104E

AOCA33103E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

 6.2. Size:785K  aosemi
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AOCA33104E

AOCA33102E 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V) ... See More ⇒

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Detailed specifications: AOCA24108E, AOCA32106E, AOCA72114, AOCA32301, AOCA24106C, AOCA24106E, AOCA33103E, AOCA33104A, IRLB3034, AOCA72104E, AONT21313C, AONT32136C, AOC3870A, AOCA32107E, AOC3870C, AOCA32108E, AOCA35212E

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