AOCA72104E Datasheet and Replacement
Type Designator: AOCA72104E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
Package: DFN2.98X1.49A-10L
AOCA72104E substitution
AOCA72104E Datasheet (PDF)
aoca72104e.pdf

AOCA72104E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) Common drain configuration for design simplicity RSS(ON) (at VGS=4.5V)
aoca72114.pdf

AOCA7211412V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
Datasheet: AOCA32106E , AOCA72114 , AOCA32301 , AOCA24106C , AOCA24106E , AOCA33103E , AOCA33104A , AOCA33104E , AON7403 , AONT21313C , AONT32136C , AOC3870A , AOCA32107E , AOC3870C , AOCA32108E , AOCA35212E , AOC3860A .
History: FQP7N10 | 5N90A | 4N60AF | CJ3400 | IPS60R1K0PFD7S | 7N80L-TA3-T | IPS60R400CE
Keywords - AOCA72104E MOSFET datasheet
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History: FQP7N10 | 5N90A | 4N60AF | CJ3400 | IPS60R1K0PFD7S | 7N80L-TA3-T | IPS60R400CE



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