AOC3870A Specs and Replacement

Type Designator: AOC3870A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: DFN3.01X1.52A-10L

AOC3870A substitution

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AOC3870A datasheet

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AOC3870A

AOC3870A 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V) ... See More ⇒

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AOC3870A

AOC3870C 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 7.2. Size:432K  aosemi
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AOC3870A

AOC3870 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

 8.1. Size:906K  aosemi
aoc3878.pdf pdf_icon

AOC3870A

AOC3878 12V Common-Drain Dual N-Channel MOSFET General Description Product Summary VSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V) ... See More ⇒

Detailed specifications: AOCA24106C, AOCA24106E, AOCA33103E, AOCA33104A, AOCA33104E, AOCA72104E, AONT21313C, AONT32136C, K2611, AOCA32107E, AOC3870C, AOCA32108E, AOCA35212E, AOC3860A, AOC3860C, AOCA33102E, AOCA36116C

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