All MOSFET. AOC3870A Datasheet

 

AOC3870A MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOC3870A
   Marking Code: 3870A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 3000 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: DFN3.01X1.52A-10L

 AOC3870A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOC3870A Datasheet (PDF)

 ..1. Size:799K  aosemi
aoc3870a.pdf

AOC3870A
AOC3870A

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)

 7.1. Size:793K  aosemi
aoc3870c.pdf

AOC3870A
AOC3870A

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 7.2. Size:432K  aosemi
aoc3870.pdf

AOC3870A
AOC3870A

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:906K  aosemi
aoc3878.pdf

AOC3870A
AOC3870A

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTP9435L3

 

 
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