AOC3870A Datasheet and Replacement
Type Designator: AOC3870A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3000 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: DFN3.01X1.52A-10L
AOC3870A substitution
AOC3870A Datasheet (PDF)
aoc3870a.pdf

AOC3870A12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoc3870c.pdf

AOC3870C12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3870.pdf

AOC387012V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoc3878.pdf

AOC387812V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Datasheet: AOCA24106C , AOCA24106E , AOCA33103E , AOCA33104A , AOCA33104E , AOCA72104E , AONT21313C , AONT32136C , IRF9640 , AOCA32107E , AOC3870C , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C .
Keywords - AOC3870A MOSFET datasheet
AOC3870A cross reference
AOC3870A equivalent finder
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AOC3870A substitution
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History: PTA08N100 | 3SK323



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