AOCA32107E Datasheet and Replacement
Type Designator: AOCA32107E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3000 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: DFN3.01X1.52A-10L
AOCA32107E substitution
AOCA32107E Datasheet (PDF)
aoca32107e.pdf

AOCA32107E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32106e.pdf

AOCA32106E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET Technology 12V Low RSS(ON) With ESD protection to improve battery performance and RSS(ON) (at VGS=4.5V)
aoca32108e.pdf

AOCA32108E12V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 12V Ultra low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
aoca32112e.pdf

AOCA32112E20V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVSS Trench Power MOSFET technology 20V Low RSS(ON) With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)
Datasheet: AOCA24106E , AOCA33103E , AOCA33104A , AOCA33104E , AOCA72104E , AONT21313C , AONT32136C , AOC3870A , 2SK3918 , AOC3870C , AOCA32108E , AOCA35212E , AOC3860A , AOC3860C , AOCA33102E , AOCA36116C , AOCA32317 .
History: IPD800N06NG
Keywords - AOCA32107E MOSFET datasheet
AOCA32107E cross reference
AOCA32107E equivalent finder
AOCA32107E lookup
AOCA32107E substitution
AOCA32107E replacement
History: IPD800N06NG



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