All MOSFET. FQPF17N40 Datasheet

 

FQPF17N40 Datasheet and Replacement


   Type Designator: FQPF17N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO220F
 

 FQPF17N40 substitution

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FQPF17N40 Datasheet (PDF)

 ..1. Size:728K  fairchild semi
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FQPF17N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 ..2. Size:1044K  onsemi
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FQPF17N40

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:723K  fairchild semi
fqpf17n40t.pdf pdf_icon

FQPF17N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has bee

 7.1. Size:600K  fairchild semi
fqpf17n08.pdf pdf_icon

FQPF17N40

January 2001TMQFETQFETQFETQFETFQPF17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 11.2A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has bee

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - FQPF17N40 MOSFET datasheet

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