All MOSFET. AONP36332U Datasheet

 

AONP36332U Datasheet and Replacement


   Type Designator: AONP36332U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 97 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN3.3X3.3D-8L
 

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AONP36332U Datasheet (PDF)

 ..1. Size:716K  aosemi
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AONP36332U

AONP36332U30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:735K  aosemi
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AONP36332U

AONP3633230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:1546K  aosemi
 aonp36336.pdf pdf_icon

AONP36332U

AONP3633630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:716K  aosemi
 aonp36320.pdf pdf_icon

AONP36332U

AONP3632030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 100A 103A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONR66820 , AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , IRF640N , AONP38324U , AOCA36102E , AOC3878 , AONG36322 , AONU32320 , AON7264C , AONH36328 , AONH36334 .

History: AOY2N60 | NTMFS4985NF | QS5U13 | MSJAC11N65Y | HX2301A | 2SK3686-01 | 5N65KG-TN3-R

Keywords - AONP36332U MOSFET datasheet

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