AONP36332U Specs and Replacement

Type Designator: AONP36332U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 97 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN3.3X3.3D-8L

AONP36332U substitution

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AONP36332U datasheet

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AONP36332U

AONP36332U 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 5.1. Size:735K  aosemi
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AONP36332U

AONP36332 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:1546K  aosemi
aonp36336.pdf pdf_icon

AONP36332U

AONP36336 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 7.1. Size:716K  aosemi
aonp36320.pdf pdf_icon

AONP36332U

AONP36320 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 100A 103A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONR66820, AONR66821, AONR66922, AONE38132, AONP36332, AONP36336, AONP36320, AONP38324, IRFB4110, AONP38324U, AOCA36102E, AOC3878, AONG36322, AONU32320, AON7264C, AONH36328, AONH36334

Keywords - AONP36332U MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs