AONP36332U
MOSFET. Datasheet pdf. Equivalent
Type Designator: AONP36332U
Marking Code: 36332U
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9
V
|Id|ⓘ - Maximum Drain Current: 97
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 330
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package: DFN3.3X3.3D-8L
AONP36332U
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AONP36332U
Datasheet (PDF)
..1. Size:716K aosemi
aonp36332u.pdf
AONP36332U30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V)
5.1. Size:735K aosemi
aonp36332.pdf
AONP3633230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)
6.1. Size:1546K aosemi
aonp36336.pdf
AONP3633630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)
7.1. Size:716K aosemi
aonp36320.pdf
AONP3632030V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 100A 103A Low Gate Charge RDS(ON) (at VGS=10V)
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