All MOSFET. AONP38324U Datasheet

 

AONP38324U Datasheet and Replacement


   Type Designator: AONP38324U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 155 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: DFN3.3X3.3D-8L
 

 AONP38324U substitution

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AONP38324U Datasheet (PDF)

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AONP38324U

AONP38324U30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 155A 118A Low Gate Charge RDS(ON) (at VGS=10V)

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AONP38324U

AONP3832430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 134A 110A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:1546K  aosemi
 aonp36336.pdf pdf_icon

AONP38324U

AONP3633630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:716K  aosemi
 aonp36332u.pdf pdf_icon

AONP38324U

AONP36332U30V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONR66821 , AONR66922 , AONE38132 , AONP36332 , AONP36336 , AONP36320 , AONP38324 , AONP36332U , IRF640N , AOCA36102E , AOC3878 , AONG36322 , AONU32320 , AON7264C , AONH36328 , AONH36334 , AONR20334C .

History: BRCS035N10SHBD

Keywords - AONP38324U MOSFET datasheet

 AONP38324U cross reference
 AONP38324U equivalent finder
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 AONP38324U replacement

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