AONP38324U Specs and Replacement

Type Designator: AONP38324U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 155 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: DFN3.3X3.3D-8L

AONP38324U substitution

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AONP38324U datasheet

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AONP38324U

AONP38324U 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 155A 118A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONP38324U

AONP38324 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 134A 110A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:1546K  aosemi
 aonp36336.pdf pdf_icon

AONP38324U

AONP36336 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 50A 50A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:716K  aosemi
 aonp36332u.pdf pdf_icon

AONP38324U

AONP36332U 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Bottom source technology Very Low RDS(ON) at Vgs 4.5V ID (at VGS=10V) 97A 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONR66821, AONR66922, AONE38132, AONP36332, AONP36336, AONP36320, AONP38324, AONP36332U, IRF640N, AOCA36102E, AOC3878, AONG36322, AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C

Keywords - AONP38324U MOSFET specs

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