AONR21305C Specs and Replacement
Type Designator: AONR21305C
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 505 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: DFN3X3A-8L
AONR21305C substitution
- MOSFET ⓘ Cross-Reference Search
AONR21305C datasheet
aonr21305c.pdf
AONR21305C 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aonr21307.pdf
AONR21307 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aonr21357.pdf
AONR21357 30V P-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
aonr21321.pdf
AONR21321 30V P-Channel MOSFET General Description Product Summary VDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V) ... See More ⇒
Detailed specifications: AONG36322, AONU32320, AON7264C, AONH36328, AONH36334, AONR20334C, AONR20485, AONR21117, 7N65, AONR21311C, AONR26309A, AONR32320C, AONR36326C, AONR36328, AONR36329, AONR66620, AONR66924
Keywords - AONR21305C MOSFET specs
AONR21305C cross reference
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