FQPF19N10 PDF and Equivalents Search

 

FQPF19N10 Specs and Replacement

Type Designator: FQPF19N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 13.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 19 nC

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220F

FQPF19N10 substitution

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FQPF19N10 datasheet

 ..1. Size:581K  fairchild semi
fqpf19n10.pdf pdf_icon

FQPF19N10

August 2000 TM QFET QFET QFET QFET FQPF19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been... See More ⇒

 0.1. Size:616K  fairchild semi
fqpf19n10l.pdf pdf_icon

FQPF19N10

August 2000 TM QFET QFET QFET QFET FQPF19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology h... See More ⇒

 7.1. Size:686K  fairchild semi
fqpf19n20t.pdf pdf_icon

FQPF19N10

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.8A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has be... See More ⇒

 7.2. Size:1168K  fairchild semi
fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf pdf_icon

FQPF19N10

QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailo... See More ⇒

Detailed specifications: FQPF11P06 , FQPF13N06L , FQPF13N50CF , FQPF15P12 , FQPF16N15 , FQPF16N25C , FQPF17N40 , FDS8690 , P55NF06 , FDD20AN06F085 , FQPF19N20 , HUF76429DF085 , FQPF19N20C , FCU5N60 , FQPF20N06 , FQPF20N06L , FQPF22N30 .

Keywords - FQPF19N10 MOSFET specs

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