All MOSFET. AON6264C Datasheet

 

AON6264C MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6264C
   Marking Code: 6264C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
   Package: DFN5X6-8L

 AON6264C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6264C Datasheet (PDF)

 ..1. Size:567K  aosemi
 aon6264c.pdf

AON6264C AON6264C

AON6264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 7.1. Size:347K  aosemi
 aon6264e.pdf

AON6264C AON6264C

AON6264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:334K  1
 aon6262e.pdf

AON6264C AON6264C

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:334K  aosemi
 aon6262e.pdf

AON6264C AON6264C

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:368K  aosemi
 aon6266.pdf

AON6264C AON6264C

AON626660V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 8.4. Size:565K  aosemi
 aon6266e.pdf

AON6264C AON6264C

AON6266ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.5. Size:262K  aosemi
 aon6260.pdf

AON6264C AON6264C

AON626060V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6260 uses trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.6. Size:331K  aosemi
 aon6268.pdf

AON6264C AON6264C

AON6268TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PHP2N60E

 

 
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