All MOSFET. AONS32302 Datasheet

 

AONS32302 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONS32302
   Marking Code: 32302
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00135 Ohm
   Package: DFN5X6-8L

 AONS32302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONS32302 Datasheet (PDF)

 ..1. Size:693K  aosemi
 aons32302.pdf

AONS32302 AONS32302

AONS3230230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 220A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:387K  aosemi
 aons32306.pdf

AONS32302 AONS32302

AONS3230630V N-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology 30V Low RDS(ON) ID (at VGS=10V) 36A High Current Capability RDS(ON) (at VGS=10V)

 6.2. Size:403K  aosemi
 aons32303.pdf

AONS32302 AONS32302

AONS3230330V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 200A High Current Capability RDS(ON) (at VGS=10V)

 6.3. Size:754K  aosemi
 aons32304.pdf

AONS32302 AONS32302

AONS3230430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 140A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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