All MOSFET. AONS36308 Datasheet

 

AONS36308 Datasheet and Replacement


   Type Designator: AONS36308
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: DFN5X6-8L
      - MOSFET Cross-Reference Search

 

AONS36308 Datasheet (PDF)

 ..1. Size:408K  aosemi
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AONS36308

AONS3630830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 53A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:416K  aosemi
aons36303.pdf pdf_icon

AONS36308

AONS3630330V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 83A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:406K  aosemi
aons36302.pdf pdf_icon

AONS36308

AONS3630230V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 146A Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:406K  aosemi
aons36304.pdf pdf_icon

AONS36308

AONS3630430V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HSH120N85 | IRLU9343PBF | 2SK3437 | 2N7380 | IXFK44N50 | VST012N06MS | 15NM70L-TF34-T

Keywords - AONS36308 MOSFET datasheet

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