All MOSFET. AONS66405 Datasheet

 

AONS66405 Datasheet and Replacement


   Type Designator: AONS66405
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 310 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 1530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: DFN5X6-8L
 

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AONS66405 Datasheet (PDF)

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AONS66405

AONS66405TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)

 0.1. Size:408K  aosemi
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AONS66405

AONS66405TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 385A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)

 6.1. Size:362K  aosemi
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AONS66405

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 6.2. Size:427K  aosemi
 aons66407.pdf pdf_icon

AONS66405

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONS62530 , AONS62606 , AONS62614T , AONS62920 , AONS65625 , AONS660A60 , AONS660A70F , AONS66402T , IRF9640 , AONS66405T , AONS66407 , AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 , AONS66605 .

History: IRF7805Z | FQPF50N06 | BLP08N10G-Q | AOK065A60FD | 11NM70L-TMS2-T | 9N25AF | BLP05N08G-B

Keywords - AONS66405 MOSFET datasheet

 AONS66405 cross reference
 AONS66405 equivalent finder
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