All MOSFET. AONS66405 Datasheet

 

AONS66405 Datasheet and Replacement


   Type Designator: AONS66405
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 310 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 1530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: DFN5X6-8L
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AONS66405 Datasheet (PDF)

 ..1. Size:405K  aosemi
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AONS66405

AONS66405TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)

 0.1. Size:408K  aosemi
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AONS66405

AONS66405TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 385A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)

 6.1. Size:362K  aosemi
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AONS66405

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 6.2. Size:427K  aosemi
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AONS66405

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KHB1D0N60I | IRF441 | AP9926GEO | RW1C020UN | STD4N62K3 | AP9970GK | GSM3050S

Keywords - AONS66405 MOSFET datasheet

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