AONS66407 Specs and Replacement
Type Designator: AONS66407
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 370 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 1550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm
Package: DFN5X6-8L
AONS66407 substitution
- MOSFET ⓘ Cross-Reference Search
AONS66407 datasheet
aons66407.pdf
AONS66407 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aons66402t.pdf
AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒
aons66408.pdf
AONS66408 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AONS62614T, AONS62920, AONS65625, AONS660A60, AONS660A70F, AONS66402T, AONS66405, AONS66405T, AON7403, AONS66408, AONS66415, AONS66520, AONS66521, AONS66524, AONS66605, AONS66607, AONS66609
Keywords - AONS66407 MOSFET specs
AONS66407 cross reference
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AONS66407 substitution
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