AONS66407 Datasheet and Replacement
Type Designator: AONS66407
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 370 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 1550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00085 Ohm
Package: DFN5X6-8L
AONS66407 substitution
AONS66407 Datasheet (PDF)
aons66407.pdf

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66402t.pdf

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
aons66408.pdf

AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
aons66405.pdf

AONS66405TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)
Datasheet: AONS62614T , AONS62920 , AONS65625 , AONS660A60 , AONS660A70F , AONS66402T , AONS66405 , AONS66405T , EMB04N03H , AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 , AONS66605 , AONS66607 , AONS66609 .
History: IPA65R310CFD
Keywords - AONS66407 MOSFET datasheet
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History: IPA65R310CFD



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