AONS66521 Specs and Replacement

Type Designator: AONS66521

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: DFN5X6-8L

AONS66521 substitution

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AONS66521 datasheet

 ..1. Size:381K  aosemi
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AONS66521

AONS66521 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 150V Low RDS(ON) and Gate Charge ID (at VGS=10V) 100A Enhanced Robustness RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:370K  aosemi
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AONS66521

AONS66524 TM 150V N-Channel AlphaSGT General Description Product Summary VDS 150V Trench Power AlphaSGTTM technology ID (at VGS=20V) 56A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:380K  aosemi
aons66520.pdf pdf_icon

AONS66521

AONS66520 TM 150V N-Channel AlphaSGT General Description Product Summary VDS 150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:362K  aosemi
aons66402t.pdf pdf_icon

AONS66521

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS660A70F, AONS66402T, AONS66405, AONS66405T, AONS66407, AONS66408, AONS66415, AONS66520, MMIS60R580P, AONS66524, AONS66605, AONS66607, AONS66609, AONS66609T, AONS66612, AONS66612T, AONS66613

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs