All MOSFET. AONS66609 Datasheet

 

AONS66609 Datasheet and Replacement


   Type Designator: AONS66609
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 304 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00125 Ohm
   Package: DFN5X6-8L
 

 AONS66609 substitution

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AONS66609 Datasheet (PDF)

 ..1. Size:412K  aosemi
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AONS66609

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 0.1. Size:416K  aosemi
 aons66609t.pdf pdf_icon

AONS66609

AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:436K  aosemi
 aons66607.pdf pdf_icon

AONS66609

AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.2. Size:440K  aosemi
 aons66605.pdf pdf_icon

AONS66609

AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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Datasheet: AONS66407 , AONS66408 , AONS66415 , AONS66520 , AONS66521 , AONS66524 , AONS66605 , AONS66607 , 5N50 , AONS66609T , AONS66612 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T , AONS66617 .

Keywords - AONS66609 MOSFET datasheet

 AONS66609 cross reference
 AONS66609 equivalent finder
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