All MOSFET. AONS66612 Datasheet

 

AONS66612 Datasheet and Replacement


   Type Designator: AONS66612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 268 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00165 Ohm
   Package: DFN5X6-8L
 

 AONS66612 substitution

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AONS66612 Datasheet (PDF)

 ..1. Size:377K  aosemi
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AONS66612

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 0.1. Size:715K  aosemi
 aons66612t.pdf pdf_icon

AONS66612

AONS66612TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66612

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66612

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

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Datasheet: AONS66415 , AONS66520 , AONS66521 , AONS66524 , AONS66605 , AONS66607 , AONS66609 , AONS66609T , BS170 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T , AONS66617 , AONS66620 , AONS66641 .

History: AP9479GM-HF | AP9930GM-HF | AP9466GH | AP9465GEM | JCS2N70MFH | UPA2793GR | UPA2815T1S

Keywords - AONS66612 MOSFET datasheet

 AONS66612 cross reference
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