All MOSFET. AONS66612 Datasheet

 

AONS66612 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONS66612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 268 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00165 Ohm
   Package: DFN5X6-8L

 AONS66612 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONS66612 Datasheet (PDF)

 ..1. Size:377K  aosemi
 aons66612.pdf

AONS66612 AONS66612

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 0.1. Size:715K  aosemi
 aons66612t.pdf

AONS66612 AONS66612

AONS66612TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:410K  aosemi
 aons66615.pdf

AONS66612 AONS66612

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:447K  aosemi
 aons66617.pdf

AONS66612 AONS66612

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

 6.3. Size:445K  aosemi
 aons66613.pdf

AONS66612 AONS66612

AONS66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

 6.4. Size:720K  aosemi
 aons66614.pdf

AONS66612 AONS66612

AONS6661460V N-Channel AlphaSGT TMGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.5. Size:428K  aosemi
 aons66615t.pdf

AONS66612 AONS66612

AONS66615TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 114A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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