All MOSFET. AONS66617 Datasheet

 

AONS66617 Datasheet and Replacement


   Type Designator: AONS66617
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: DFN5X6-8L
 

 AONS66617 substitution

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AONS66617 Datasheet (PDF)

 ..1. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66617

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

 6.1. Size:377K  aosemi
 aons66612.pdf pdf_icon

AONS66617

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.2. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66617

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:445K  aosemi
 aons66613.pdf pdf_icon

AONS66617

AONS66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

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Datasheet: AONS66609 , AONS66609T , AONS66612 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T , IRF540 , AONS66620 , AONS66641 , AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 .

History: IPB80N06S2-07 | FDB86563F085 | AP95T06AGP | BSS225

Keywords - AONS66617 MOSFET datasheet

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