AONS66620 Datasheet and Replacement
Type Designator: AONS66620
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6-8L
AONS66620 substitution
AONS66620 Datasheet (PDF)
aons66620.pdf

AONS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)
aons66609.pdf

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66641t.pdf

AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66612.pdf

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)
Datasheet: AONS66609T , AONS66612 , AONS66612T , AONS66613 , AONS66614 , AONS66615 , AONS66615T , AONS66617 , IRF540N , AONS66641 , AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 , AONS66916T .
History: 2SK259
Keywords - AONS66620 MOSFET datasheet
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History: 2SK259



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