All MOSFET. AONS66811 Datasheet

 

AONS66811 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONS66811
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 258 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 287 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1580 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: DFN5X6-8L

 AONS66811 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONS66811 Datasheet (PDF)

 ..1. Size:424K  aosemi
 aons66811.pdf

AONS66811 AONS66811

AONS66811TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 287A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V)

 6.1. Size:429K  aosemi
 aons66814.pdf

AONS66811 AONS66811

AONS66814TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.2. Size:427K  aosemi
 aons66817.pdf

AONS66811 AONS66811

AONS66817TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:362K  aosemi
 aons66402t.pdf

AONS66811 AONS66811

AONS66402TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.2. Size:313K  aosemi
 aons66916.pdf

AONS66811 AONS66811

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:370K  aosemi
 aons66524.pdf

AONS66811 AONS66811

AONS66524TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power AlphaSGTTM technology ID (at VGS=20V) 56A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.4. Size:412K  aosemi
 aons66609.pdf

AONS66811 AONS66811

AONS66609TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 304A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.5. Size:771K  aosemi
 aons66923.pdf

AONS66811 AONS66811

AONS66923TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 47A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.6. Size:419K  aosemi
 aons66641t.pdf

AONS66811 AONS66811

AONS66641TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 325A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.7. Size:427K  aosemi
 aons66407.pdf

AONS66811 AONS66811

AONS66407TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 370A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.8. Size:381K  aosemi
 aons66521.pdf

AONS66811 AONS66811

AONS66521150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Low RDS(ON) and Gate Charge ID (at VGS=10V) 100A Enhanced Robustness RDS(ON) (at VGS=10V)

 8.9. Size:377K  aosemi
 aons66612.pdf

AONS66811 AONS66811

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 8.10. Size:411K  aosemi
 aons66620.pdf

AONS66811 AONS66811

AONS66620TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product(FOM) RDS(ON) (at VGS=10V)

 8.11. Size:340K  aosemi
 aons66917t.pdf

AONS66811 AONS66811

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.12. Size:416K  aosemi
 aons66908.pdf

AONS66811 AONS66811

AONS66908TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 158A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.13. Size:419K  aosemi
 aons66919.pdf

AONS66811 AONS66811

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.14. Size:414K  aosemi
 aons66408.pdf

AONS66811 AONS66811

AONS66408TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Very Low RDS(ON) Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)

 8.15. Size:436K  aosemi
 aons66607.pdf

AONS66811 AONS66811

AONS6660760V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 75A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.16. Size:762K  aosemi
 aons66920.pdf

AONS66811 AONS66811

AONS66920TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.17. Size:415K  aosemi
 aons66415.pdf

AONS66811 AONS66811

AONS66415TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 150A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.18. Size:440K  aosemi
 aons66605.pdf

AONS66811 AONS66811

AONS6660560V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.19. Size:410K  aosemi
 aons66615.pdf

AONS66811 AONS66811

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.20. Size:336K  aosemi
 aons66917.pdf

AONS66811 AONS66811

AONS66917TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.21. Size:405K  aosemi
 aons66405.pdf

AONS66811 AONS66811

AONS66405TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)

 8.22. Size:447K  aosemi
 aons66617.pdf

AONS66811 AONS66811

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

 8.23. Size:322K  aosemi
 aons66402.pdf

AONS66811 AONS66811

AONS66402TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.24. Size:422K  aosemi
 aons66909.pdf

AONS66811 AONS66811

AONS66909TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology 100V ID (at VGS=10V) 160A Low RDS(ON) Excellent QG x RDS(ON) RDS(ON) (at VGS=10V)

 8.25. Size:408K  aosemi
 aons66405t.pdf

AONS66811 AONS66811

AONS66405TTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 385A Low RDS(ON)*QOSS and optimised switching performance. RDS(ON) (at VGS=10V)

 8.26. Size:380K  aosemi
 aons66520.pdf

AONS66811 AONS66811

AONS66520TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.27. Size:445K  aosemi
 aons66613.pdf

AONS66811 AONS66811

AONS66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

 8.28. Size:885K  aosemi
 aons660a70f.pdf

AONS66811 AONS66811

AONS660A70FTM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

 8.29. Size:407K  aosemi
 aons66641.pdf

AONS66811 AONS66811

AONS66641TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.30. Size:715K  aosemi
 aons66612t.pdf

AONS66811 AONS66811

AONS66612TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 275A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.31. Size:416K  aosemi
 aons66609t.pdf

AONS66811 AONS66811

AONS66609TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 313A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.32. Size:345K  aosemi
 aons66916t.pdf

AONS66811 AONS66811

AONS66916TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 184A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.33. Size:720K  aosemi
 aons66614.pdf

AONS66811 AONS66811

AONS6661460V N-Channel AlphaSGT TMGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.34. Size:667K  aosemi
 aons660a60.pdf

AONS66811 AONS66811

AONS660A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 28A Optimized switching parameters for better EMI RDS(ON),max

 8.35. Size:328K  aosemi
 aons66406.pdf

AONS66811 AONS66811

AONS66406TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 30A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.36. Size:428K  aosemi
 aons66615t.pdf

AONS66811 AONS66811

AONS66615TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 114A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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