AONS66811 Specs and Replacement

Type Designator: AONS66811

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 258 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 287 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 1580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: DFN5X6-8L

AONS66811 substitution

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AONS66811 datasheet

 ..1. Size:424K  aosemi
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AONS66811

AONS66811 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V Trench Power AlphaSGT2TM technology ID (at VGS=10V) 287A Low RDS(ON) and optimized switching performance RoHS 2.0 and Halogen-Free Compliant RDS(ON) (at VGS=10V) ... See More ⇒

 6.1. Size:429K  aosemi
aons66814.pdf pdf_icon

AONS66811

AONS66814 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 310A Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:427K  aosemi
aons66817.pdf pdf_icon

AONS66811

AONS66817 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:362K  aosemi
aons66402t.pdf pdf_icon

AONS66811

AONS66402T TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 224A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AONS66613, AONS66614, AONS66615, AONS66615T, AONS66617, AONS66620, AONS66641, AONS66641T, IRFZ44, AONS66814, AONS66817, AONS66908, AONS66909, AONS66916T, AONS66917, AONS66917T, AONS66919

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs