All MOSFET. AONS66917 Datasheet

 

AONS66917 Datasheet and Replacement


   Type Designator: AONS66917
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 1475 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6-8L
 

 AONS66917 substitution

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AONS66917 Datasheet (PDF)

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AONS66917

AONS66917TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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AONS66917

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:313K  aosemi
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AONS66917

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:419K  aosemi
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AONS66917

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

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Datasheet: AONS66641 , AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 , AONS66916T , 10N60 , AONS66917T , AONS66919 , AONS66920 , AONS66923 , AONS67614 , AONS68520 , AONS74304 , AONS74306 .

History: AOT210L | IXTP130N10T

Keywords - AONS66917 MOSFET datasheet

 AONS66917 cross reference
 AONS66917 equivalent finder
 AONS66917 lookup
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 AONS66917 replacement

 

 
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