All MOSFET. AONS66917T Datasheet

 

AONS66917T Datasheet and Replacement


   Type Designator: AONS66917T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 258 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 185 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 1475 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6-8L
 

 AONS66917T substitution

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AONS66917T Datasheet (PDF)

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AONS66917T

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 5.1. Size:336K  aosemi
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AONS66917T

AONS66917TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:313K  aosemi
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AONS66917T

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:419K  aosemi
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AONS66917T

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

Datasheet: AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 , AONS66916T , AONS66917 , IRF3710 , AONS66919 , AONS66920 , AONS66923 , AONS67614 , AONS68520 , AONS74304 , AONS74306 , AONS74312 .

History: UT2955G-TN3-R | IXTP10P50P

Keywords - AONS66917T MOSFET datasheet

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