AONS66917T Datasheet and Replacement
Type Designator: AONS66917T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 258 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 185 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 1475 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: DFN5X6-8L
AONS66917T substitution
AONS66917T Datasheet (PDF)
aons66917t.pdf

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66917.pdf

AONS66917TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66916.pdf

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aons66919.pdf

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
Datasheet: AONS66641T , AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 , AONS66916T , AONS66917 , IRF3710 , AONS66919 , AONS66920 , AONS66923 , AONS67614 , AONS68520 , AONS74304 , AONS74306 , AONS74312 .
History: UT2955G-TN3-R | IXTP10P50P
Keywords - AONS66917T MOSFET datasheet
AONS66917T cross reference
AONS66917T equivalent finder
AONS66917T lookup
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AONS66917T replacement
History: UT2955G-TN3-R | IXTP10P50P



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