AONS66919 Specs and Replacement

Type Designator: AONS66919

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: DFN5X6-8L

AONS66919 substitution

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AONS66919 datasheet

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AONS66919

AONS66919 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒

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 aons66916.pdf pdf_icon

AONS66919

AONS66916 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONS66919

AONS66917T TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:336K  aosemi
 aons66917.pdf pdf_icon

AONS66919

AONS66917 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AONS66811, AONS66814, AONS66817, AONS66908, AONS66909, AONS66916T, AONS66917, AONS66917T, IRFB4227, AONS66920, AONS66923, AONS67614, AONS68520, AONS74304, AONS74306, AONS74312, AONS77402

Keywords - AONS66919 MOSFET specs

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