All MOSFET. AONS66919 Datasheet

 

AONS66919 Datasheet and Replacement


   Type Designator: AONS66919
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: DFN5X6-8L
 

 AONS66919 substitution

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AONS66919 Datasheet (PDF)

 ..1. Size:419K  aosemi
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AONS66919

AONS66919TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 6.1. Size:313K  aosemi
aons66916.pdf pdf_icon

AONS66919

AONS66916TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:340K  aosemi
aons66917t.pdf pdf_icon

AONS66919

AONS66917TTM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 185A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:336K  aosemi
aons66917.pdf pdf_icon

AONS66919

AONS66917TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AONS66811 , AONS66814 , AONS66817 , AONS66908 , AONS66909 , AONS66916T , AONS66917 , AONS66917T , AON6414A , AONS66920 , AONS66923 , AONS67614 , AONS68520 , AONS74304 , AONS74306 , AONS74312 , AONS77402 .

Keywords - AONS66919 MOSFET datasheet

 AONS66919 cross reference
 AONS66919 equivalent finder
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