All MOSFET. AONY36302 Datasheet

 

AONY36302 Datasheet and Replacement


   Type Designator: AONY36302
   Marking Code: 36302
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 51 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: DFN5X6-8L
      - MOSFET Cross-Reference Search

 

AONY36302 Datasheet (PDF)

 ..1. Size:740K  aosemi
 aony36302.pdf pdf_icon

AONY36302

AONY3630230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 51A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:712K  aosemi
 aony36306.pdf pdf_icon

AONY36302

AONY3630630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:745K  aosemi
 aony36304.pdf pdf_icon

AONY36302

AONY3630430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 51A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 7.1. Size:594K  1
 aony36352.pdf pdf_icon

AONY36302

AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)

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History: 2N3993 | 2SK2533 | IRF9Z34L | NCE60NF260D

Keywords - AONY36302 MOSFET datasheet

 AONY36302 cross reference
 AONY36302 equivalent finder
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