AONY36356 Specs and Replacement

Type Designator: AONY36356

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm

Package: DFN5X6B-8L

AONY36356 substitution

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AONY36356 datasheet

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AONY36356

AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONY36356

AONY36352 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:892K  aosemi
 aony36354.pdf pdf_icon

AONY36356

AONY36354 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 6.3. Size:876K  aosemi
 aony36352.pdf pdf_icon

AONY36356

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Detailed specifications: AONX36324, AONX38168, AONX38168A, AONX38320, AONY36302, AONY36304, AONY36354, AONY36306, K3569, AONZ66412, AONV095A60, AONV110A60, AONV125A60, AONV140A60, AONV180A60, AONV200A70, AONV210A60

Keywords - AONY36356 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs