All MOSFET. AONY36356 Datasheet

 

AONY36356 Datasheet and Replacement


   Type Designator: AONY36356
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: DFN5X6B-8L
 

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AONY36356 Datasheet (PDF)

 ..1. Size:761K  aosemi
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AONY36356

AONY3635630V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs ID (at VGS=10V) 32A 32A Low Gate Charge RDS(ON) (at VGS=10V)

 6.1. Size:594K  1
 aony36352.pdf pdf_icon

AONY36356

AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.2. Size:892K  aosemi
 aony36354.pdf pdf_icon

AONY36356

AONY3635430V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:876K  aosemi
 aony36352.pdf pdf_icon

AONY36356

AONY3635230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2VDS 30V 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 49A 85A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AONX36324 , AONX38168 , AONX38168A , AONX38320 , AONY36302 , AONY36304 , AONY36354 , AONY36306 , 12N60 , AONZ66412 , AONV095A60 , AONV110A60 , AONV125A60 , AONV140A60 , AONV180A60 , AONV200A70 , AONV210A60 .

History: AP4813GYT-HF | AONS30306 | AP2607AGY-HF | 2SK2117 | IRF7478TR | SMF14N65 | SLP7N65C

Keywords - AONY36356 MOSFET datasheet

 AONY36356 cross reference
 AONY36356 equivalent finder
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