All MOSFET. AONV125A60 Datasheet

 

AONV125A60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONV125A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: DFN8X8-4L

 AONV125A60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONV125A60 Datasheet (PDF)

 ..1. Size:491K  aosemi
 aonv125a60.pdf

AONV125A60 AONV125A60

AONV125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:491K  aosemi
 aonv140a60.pdf

AONV125A60 AONV125A60

AONV140A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:494K  aosemi
 aonv180a60.pdf

AONV125A60 AONV125A60

AONV180A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 9.3. Size:500K  aosemi
 aonv110a60.pdf

AONV125A60 AONV125A60

AONV110A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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