AONV125A60 Datasheet and Replacement
Type Designator: AONV125A60
Marking Code: 125A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 44 nC
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: DFN8X8-4L
AONV125A60 substitution
AONV125A60 Datasheet (PDF)
aonv125a60.pdf

AONV125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aonv140a60.pdf

AONV140A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aonv180a60.pdf

AONV180A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
aonv110a60.pdf

AONV110A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONY36302 , AONY36304 , AONY36354 , AONY36306 , AONY36356 , AONZ66412 , AONV095A60 , AONV110A60 , IRF9540N , AONV140A60 , AONV180A60 , AONV200A70 , AONV210A60 , AONV310A60 , AONV420A60 , AONV420A70 , AOLF66412 .
History: IXTP32N65XM | 2SK3510-S
Keywords - AONV125A60 MOSFET datasheet
AONV125A60 cross reference
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History: IXTP32N65XM | 2SK3510-S



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