AONV140A60 Specs and Replacement

Type Designator: AONV140A60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: DFN8X8-4L

AONV140A60 substitution

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AONV140A60 datasheet

 ..1. Size:491K  aosemi
 aonv140a60.pdf pdf_icon

AONV140A60

AONV140A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.1. Size:491K  aosemi
 aonv125a60.pdf pdf_icon

AONV140A60

AONV125A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.2. Size:494K  aosemi
 aonv180a60.pdf pdf_icon

AONV140A60

AONV180A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

 9.3. Size:500K  aosemi
 aonv110a60.pdf pdf_icon

AONV140A60

AONV110A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒

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Detailed specifications: AONY36304, AONY36354, AONY36306, AONY36356, AONZ66412, AONV095A60, AONV110A60, AONV125A60, K4145, AONV180A60, AONV200A70, AONV210A60, AONV310A60, AONV420A60, AONV420A70, AOLF66412, AOLF66413

Keywords - AONV140A60 MOSFET specs

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