All MOSFET. AONV180A60 Datasheet

 

AONV180A60 Datasheet and Replacement


   Type Designator: AONV180A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: DFN8X8-4L
 

 AONV180A60 substitution

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AONV180A60 Datasheet (PDF)

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AONV180A60

AONV180A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 9.1. Size:491K  aosemi
 aonv125a60.pdf pdf_icon

AONV180A60

AONV125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

 9.2. Size:491K  aosemi
 aonv140a60.pdf pdf_icon

AONV180A60

AONV140A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max

 9.3. Size:500K  aosemi
 aonv110a60.pdf pdf_icon

AONV180A60

AONV110A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max

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Datasheet: AONY36354 , AONY36306 , AONY36356 , AONZ66412 , AONV095A60 , AONV110A60 , AONV125A60 , AONV140A60 , AO4407 , AONV200A70 , AONV210A60 , AONV310A60 , AONV420A60 , AONV420A70 , AOLF66412 , AOLF66413 , AOLF66417 .

History: SI3499DV | IRFIZ34GPBF | 2N7002X | ZXMC3AMC | NTZS3151PT1G | LSE65R180GF

Keywords - AONV180A60 MOSFET datasheet

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