AONV180A60 Datasheet and Replacement
Type Designator: AONV180A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 62 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: DFN8X8-4L
AONV180A60 substitution
AONV180A60 Datasheet (PDF)
aonv180a60.pdf

AONV180A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
aonv125a60.pdf

AONV125A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aonv140a60.pdf

AONV140A60TM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aonv110a60.pdf

AONV110A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONY36354 , AONY36306 , AONY36356 , AONZ66412 , AONV095A60 , AONV110A60 , AONV125A60 , AONV140A60 , TK10A60D , AONV200A70 , AONV210A60 , AONV310A60 , AONV420A60 , AONV420A70 , AOLF66412 , AOLF66413 , AOLF66417 .
History: 2SK303
Keywords - AONV180A60 MOSFET datasheet
AONV180A60 cross reference
AONV180A60 equivalent finder
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History: 2SK303



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