AONV420A70 Datasheet and Replacement
Type Designator: AONV420A70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 34 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: DFN8X8-4L
AONV420A70 substitution
AONV420A70 Datasheet (PDF)
aonv420a70.pdf

AONV420A70TM700V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 46A Optimized switching parameters for better EMI RDS(ON),max
aonv420a60.pdf

AONV420A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AONV110A60 , AONV125A60 , AONV140A60 , AONV180A60 , AONV200A70 , AONV210A60 , AONV310A60 , AONV420A60 , AON7506 , AOLF66412 , AOLF66413 , AOLF66417 , AOLF66610 , AOLF66910 , AOSN32128 , AOSN32338C , AOSX21319C .
History: VBMB185R05 | R6012ANJ | MTP20N15EG
Keywords - AONV420A70 MOSFET datasheet
AONV420A70 cross reference
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History: VBMB185R05 | R6012ANJ | MTP20N15EG



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